Bounds and Code Constructions for Partially Defect Memory Cells

by   Haider Al Kim, et al.

This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for masking such partially stuck cells while additionally correcting errors. This construction (for cells with q >2 levels) is achieved by generalizing an existing masking-only construction in [1] (based on binary codes) to correct errors as well. Compared to previous constructions in [2], our new construction achieves larger rates for many sets of parameters. Second, we derive a sphere-packing (any number of u partially stuck cells) and a Gilbert-Varshamov bound (u<q partially stuck cells) for codes that can mask a certain number of partially stuck cells and correct errors additionally. A numerical comparison between the new bounds and our previous construction of PSMCs for the case u<q in [2] shows that our construction lies above the Gilbert-Varshamov-like bound for several code parameters.



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