A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

09/21/2023

∙

by   Laura Bégon-Lours, et al.

∙

0

∙

share

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget ( 375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.